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DIBL effect

「DIBL effect」文章包含有:「2.3Drain」、「DIBL效应」、「Draininducedbarrierlowering(DIBL)effectinStaticIV...」、「Drain」、「StudyofDrainInducedBarrierLowering(DIBL)Effect...」、「StudyofDrainInducedBarrierLowering(DIBL)Effectfor...」、「WhatisDIBLinMOSFET?」、「[問題]半導體物理DIBL與bodyeffect差異」

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2.3 Drain
2.3 Drain

https://www.iue.tuwien.ac.at

One effect that is very similar to the punchthrough effect is Drain-Induced Barrier Lowering (DIBL) [74]. In the literature punchthrough is sometimes referred ...

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DIBL效应
DIBL效应

https://baike.baidu.com

DIBL效应,是漏端引入的势垒降低(DIBL,Drain Induced Barrier Lowering)效应,指的是小尺寸场效应晶体管(FET)中所出现的一种不良现象。

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Drain induced barrier lowering (DIBL) effect in Static IV ...
Drain induced barrier lowering (DIBL) effect in Static IV ...

https://www.researchgate.net

It can be seen from Figure 1 that the DIBL effect will weaken the effect that is brought by gate voltage. The device will be turned from off-state to on-state ...

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Drain
Drain

https://en.wikipedia.org

Drain-induced barrier lowering (DIBL) is a short-channel effect in MOSFETs referring originally to a reduction of threshold voltage of the transistor at higher ...

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Study of Drain Induced Barrier Lowering(DIBL) Effect ...
Study of Drain Induced Barrier Lowering(DIBL) Effect ...

https://www.sciencedirect.com

Abstract. Drain Induced Barrier Lowering(DIBL) effect is prominent as the feature size of MOS device keep diminishing. In this paper, a threshold voltage model ...

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Study of Drain Induced Barrier Lowering(DIBL) Effect for ...
Study of Drain Induced Barrier Lowering(DIBL) Effect for ...

https://www.sciencedirect.com

In this paper, a threshold voltage model for small-scaled strained Si nMOSFET is proposed to illustrate the DIBL effect, which is based on solving 2-D Poisson ...

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What is DIBL in MOSFET?
What is DIBL in MOSFET?

https://www.quora.com

Drain-induced barrier lowering (DIBL) is a short-channel effect in MOSFETs referring originally to a reduction of threshold voltage of the ...

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[問題] 半導體物理DIBL 與body effect 差異
[問題] 半導體物理DIBL 與body effect 差異

https://www.ptt.cc

如題,這兩個效應都是空乏區往通道延伸,為什麼前者導致閥值電壓下降,後者則是上升? 谷歌大神查很久,只有一個老外有問,但是沒看到答案-- ※ 發信 ...

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